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| BAT41 Schottky Diodes DO-35 min. 1.083 (27.5) FEATURES For general purpose applications This diode featutres low turn-on voltage max. .079 (2.0) max. .150 (3.8) and high breakdown voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. with type designation LL41. Cathode Mark min. 1.083 (27.5) This diode is also available in a MiniMELF case max. .020 (0.52) MECHANICAL DATA Dimensions in inches and (millimeters) Case: DO-35 Glass Case Weight: approx. 0.13 g MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified Symbol Repetitive Peak Reverse Voltage Forward Continuous Current at Tamb = 25 C Repetitive Peak Forward Current at tp < 1 s, @ < 0.5, Tamb = 25 C Surge Forward Current at tp = 10 ms, Tamb = 25 C Power Dissipation, Tamb = 25 C Junction Temperature Ambient Operating Temperature Range Storage Temperature Range 1) Value 100 1001) 3501) 7501) 4001) 125 -65 to +125 -65 to +150 Unit V mA mA mA mW C C C VRRM IF IFRM ISFM Ptot Tj Tamb TS Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature. 4/98 BAT41 ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified Test Conditions Reverse Breakdown Voltage tested with 100 A / 300 s Pulses Forward Voltage Pulse Test tp = 300 s at IF = 1 mA at IF = 200 mA Leakage Current Pulse Test tp = 300 s at VR = 50 V, at Tj = 25 C at VR = 50 V, at Tj = 100 C Capacitance at VR = 1 V, f = 1 MHz Reverse Recovery Time from IF = 10 mA, to IR = 10 mA to IR = 1 mA RL = 100 Ohm Thermal Resistance Junction to Ambient Air 1) Symbol V(BR)R Min. 100 Typ. 110 Max. - Unit V VF VF - - 0.40 - 0.45 1.0 V V IR IR Ctot trr - - - - - - 2 5 100 20 - - nA A pF ns RthJA - - 3001) K/W Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature. |
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